ir high power led

1/3W IR High Power LED

  • LM-80, RoHS passed
  • High reliability Epileds chip
  • Standard 730-740nm, 840-850nm or 930-940nm, other range wavelength available
  • Suitable for Plant Grow Light, Camera and Camcorder with night vision function, CCTV, Infrared Therapy Apparatus and so on
  • High temperature PC lens suitable for reflow soldering or Molding lens available
  • Anti-sulfur

Technical Parameters
Parameter

Symbol

Rating

Unit

Power Dissipation PD 1(IF=350mA) W
DC Forward Voltage VF 1.8-2.2V 1.4-1.8V 1.2-1.6 V
Absolute Maximum Ratings(At TA =25℃) Peak pulse Current IFP 1000 700 1000 1000 m A
DC Forward Current IF 700 350 700 700 m A
Operating Temperature Range TOPR -30 ~ +75 °C
Storage Temperature Range TSTG -40 ~ +85 °C
LED Junction Temperature TJ 125 °C
Electrostatic Limit ESD 2000 V
Thermal Resistance Junction To Board RΘJ-B 8 °C/W
Optical Characteristics(AT TA =25℃) Dominant wavelength λd 730-740 840-850 400-410 nm
Luminous Flux Φv GP-1WR7-1101-G42G GP-1WR8-1101-G30G GP-1WR8-1101-G42G GP-1WR9-1101-G42G lm
– -1
Chip Brand Epileds 42*42 Epileds 30*30 Epileds 42*42 Epileds 45*45 mil
Temperature Coefficient of Forward Voltage ∆VF/∆T -2 mV/°C
Reverse Current IR 10(VR=5V) μ A
Beam Angle 2Θ1/2 140 Deg
Packing Standard PS 50 Pcs/Tube
Technical Parameters

product-1

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